Power Diodes, Schottky Diode

Power devices (diodes, BJT, MOSFET):

Power Diodes:

A power diode has a P-I-N structure compared to the signal diode having a P-N structure. Here I (in P-I-N) means intrinsic semiconductor layer to support the high level reverse voltage with respect to the signal diode.

The power diodes allowing it to manage greater power are:

(a) Use of guard rings

(b) Coating a layer of silicon dioxide

Schottky diode: it has an aluminum-silicon junction where the silicon is n-type. Since the metal has no holes, there is no stored charge or reverse recovery time.

Compared to the p-n junction diode, it has:

(a) Lower cut-off voltage

(b) Higher reverse leakage current

(c) Higher operating frequency

Application: high frequency instrumentation and switching power supplies.