MOSFET & Power Bipolar Junction Transistor (BJT)

MOSFET (Metal Oxide Semiconductor Field Effect Transistor )

The MOSFET is a three-terminal majority-carrier (or unipolar) voltage-controlled device.

Ability of the power MOSFET to handle greater power.

MOSFET has 4 MODES:

The MOSFET operates in a linear region where it has a constant resistance equal to VDS/ID.

The diode anode is connected to the source and its cathode is connected to the drain.

One of the important parameters that affect the switching characteristics are the capacitances of the body existing between its three terminals, i.e. drain, source and gate. The CGS, CGD and CDS parameters are all non-linear in nature.

Power Bipolar Junction Transistor (BJT)

Power BJT is a three-terminal device with very high current and power handling capability and provides high voltage resistance in the off state. The construction of a power BJT is slightly different from that of a normal logic transistor. It has a very lightly doped (n-) region called the collector drift region.

N-p-n power transistors are widely used in high voltage and high current applications.