FET DC and AC Analysis & Design

FET its DC and AC analysis and design:

The field effect transistor (FET) is an electronic device that uses an electric field to control the flow of current. This is achieved by applying a voltage to the gate terminal, which in turn alters the conductivity between the drain and source terminals.

FETs are also known as single-pole transistors as they involve single-carrier type operation. There are many different types of field effect transistors. Field effect transistors generally exhibit very high input impedance at low frequencies.

The conductors at the source and drain terminals are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.

The three terminals of the FET are:

1. source (S), through which carriers enter the channel. Conventionally, the current entering the S channel is designated as IS.

2. Drain (D), where the channel carriers exit. Conventionally, the current entering the channel at D is designated by ID. The drain-source voltage is VDS.

3. gate (G), the terminal that modulates the conductivity of the channel. By applying voltage to G, ID can be controlled.